An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Anwar Jarndal; Giovanni Crupi; Antonio Raffo; Valeria Vadala; Giorgio Vannini

doi:10.1109/JEDS.2021.3067103

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

Anwar Jarndal
, Giovanni Crupi
, Antonio Raffo
, Valeria Vadala
, Giorgio Vannini

University of Sharjah

University of Messina
University of Ferrara

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.

Original language	English
Article number	9381406
Pages (from-to)	378-386
Number of pages	9
Journal	IEEE Journal of the Electron Devices Society
Volume	9
DOIs	https://doi.org/10.1109/JEDS.2021.3067103
State	Published - 2021

Keywords

GaN HEMT
non-quasi-static effects
scattering parameter measurements
semiconductor device modeling
silicon carbide substrate

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10.1109/JEDS.2021.3067103

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@article{83b3176638744e00b5907000c6e2b9c8,

title = "An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation",

abstract = "In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.",

keywords = "GaN HEMT, non-quasi-static effects, scattering parameter measurements, semiconductor device modeling, silicon carbide substrate",

author = "Anwar Jarndal and Giovanni Crupi and Antonio Raffo and Valeria Vadala and Giorgio Vannini",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2021",

doi = "10.1109/JEDS.2021.3067103",

language = "English",

volume = "9",

pages = "378--386",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

AU - Jarndal, Anwar

AU - Crupi, Giovanni

AU - Raffo, Antonio

AU - Vadala, Valeria

AU - Vannini, Giorgio

PY - 2021

Y1 - 2021

N2 - In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.

AB - In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models for microwave transistors. The proposed procedure is based on using an optimization approach that is improved by targeting a quasi-static behavior as additional objective function rather than only minimizing the error between the simulated and measured scattering parameters. The validity of the developed modeling methodology is successfully demonstrated by considering a 0.25x1000 μm2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) as a case study.

KW - GaN HEMT

KW - non-quasi-static effects

KW - scattering parameter measurements

KW - semiconductor device modeling

KW - silicon carbide substrate

UR - https://www.scopus.com/pages/publications/85103284299

U2 - 10.1109/JEDS.2021.3067103

DO - 10.1109/JEDS.2021.3067103

M3 - Article

AN - SCOPUS:85103284299

SN - 2168-6734

VL - 9

SP - 378

EP - 386

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

M1 - 9381406

ER -

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

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Keywords

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